Investigation of Strain in Si Devices Using Micro-Raman Spectroscopy

Download or read book Investigation of Strain in Si Devices Using Micro-Raman Spectroscopy written by Bobby Logan Hancock and published by . This book was released on 2010 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: Raman spectroscopy is a powerful, non-destructive optical technique used to study the microstructure of crystalline solids. By revealing the characteristics of the underlying structure, Raman shift can yield important information regarding stress and strain in a material. In this Carr Research project, micro-Raman spectroscopy was used to evaluate the relative strain in silicon devices of particular interest. The study was a collaboration with the Texas Tech University Department of Electrical Engineering, examining the relative strain on several devices within a silicon-based micro-electromechanical systems (MEMS) chip during actuation. This strain analysis is critical to developing actuation techniques which may lengthen the lifetime of the device. The analysis of Raman spectra for several silicon devices on the MEMS chip was completed with central focus on a particular distance multiplier device to serve as a basis of comparison for future strain analysis and continued research.