This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energ
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materi
This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and
Silicon, germanium, and compound semiconductors, among which silicon carbide, gallium arsenide and gallium nitride are the most representative examples, play a