High Resistivity Zinc Stannate as a Buffer Layer in Cds/cdte Solar Cells

Download or read book High Resistivity Zinc Stannate as a Buffer Layer in Cds/cdte Solar Cells written by Sudhakar. R. Gayam and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The effect of stoichiometry on structure, optical and electrical properties of Cd2SnO4 is studied by varying the amount of CdO and SnO2 in the Cd2SnO4 film. Zinc stannate thin films are deposited by co-sputtering of ZnO and SnO2 targets in Ar ambient at both room temperature and elevated temperatures. As deposited and high temperature annealed Zn2SnO4 thin films are highly resistive. The average transmission of a Zn2SnO4 thin film with a thickness of 2000[angstrom] and annealed at 600ʻC in He has been 94%. Zn2SnO4 thin films are incorporated as a buffer layers into CdTe solar cells. SnO2: F is used as a front contact in CdTe solar cells in conjunction with high resistive Zn2SnO4 buffer layer. The best SnO2:F /zinc stannate cell device performance for room temperature deposited zinc stannate film resulted for the device with Zn/Sn =2.1. It has an efficiency of 12.43% with VOC = 810mV, FF = 66.6% and JSC = 23.1 mA.