Growth of Single Crystalline Cubic Silicon Carbide on Porous Silicon by Chemical Vapor Deposition

Download or read book Growth of Single Crystalline Cubic Silicon Carbide on Porous Silicon by Chemical Vapor Deposition written by Kalyan Raju Cherukuvada and published by . This book was released on 2004 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single crystalline 3C-SiC layers were grown on a porous Si seed using a single gas source, trimethylsilane. The method is environmentally friendly, utilizes a non-toxic gas, and is economical. Conversion of porous Si into SiC was also attempted using methane but the process did not lead to the formation of continuous layers. The porous Si layers were made by anodizing p-type Si (100) wafers in a mixture of hydrofluoric acid and ethanol. The SiC was grown in a UHV system that was converted into a low pressure CVD reactor and was fitted with a RF heating stage capable of heating the samples up to 1200 [superscript]oC. The formation of stoichiometric SiC was confirmed by Energy Dispersive Spectrometry (EDS) while the crystal structure was examined by X-ray diffraction. Atomic force microscopy (AFM) showed the formation of rough surfaces for thin SiC layers and large flat terraces for thick SiC layers. X-ray diffraction indicates the formation of fully relaxed single crystalline 3C-SIC (100) on Si (100) wafers. And it also suggests the presence of dominating SiC (100) crystal orientations within the layer.