During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in
This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial dev
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost red
GaN Power Devices and Applications, provides an update on gallium nitride (GaN) technology and applications by leading experts. It includes detailed description