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Fabrication and Characterisation of AlGaN/GaN High Electron Mobility Transistors for Power Applications
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Fabrication and Characterisation of AlGaN/GaN High Electron Mobility Transistors for Power Applications

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Type: BOOK - Published: 2005 - Publisher:

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Fabrication and Characterization of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors for High Power Applications
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Fabrication and Characterization of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors for High Power Applications

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Fabrication and Characterization of AlGaN/GaN High Electron Mobility Transistors
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Fabrication and Characterization of AlGaN/GaN High Electron Mobility Transistors

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Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance
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The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials gro
Fabrication, Characterization, and Modeling of AlGaN/GaN High Electron Mobility Transistors
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Fabrication, Characterization, and Modeling of AlGaN/GaN High Electron Mobility Transistors

Authors: Ekaterina Harvard
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Type: BOOK - Published: 2013 - Publisher:

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Initially, advances in the high frequency markets were begun by work in Gallium Arsenide systems. In recent years, however, the focus has shifted to the promise