Growth, Processing and Characterization of Beta-silicon Carbide Single Crystals
| Author | : Robert W. Bartlett |
| Publisher | : |
| Total Pages | : 49 |
| Release | : 1967 |
| ISBN-10 | : OCLC:227468724 |
| ISBN-13 | : |
| Rating | : 4/5 (24 Downloads) |
Book Synopsis Growth, Processing and Characterization of Beta-silicon Carbide Single Crystals by : Robert W. Bartlett
Download or read book Growth, Processing and Characterization of Beta-silicon Carbide Single Crystals written by Robert W. Bartlett and published by . This book was released on 1967 with total page 49 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial vapor deposition of beta-silicon carbide on (111) beta-silicon carbide platelets and diborane doping were used to grow p-type layers on n-type substrates. Etching and thin film metallizing procedures were developed for silicon carbide, a chlorine-oxygen gas etch at 900 degrees C being used. Specific surface characteristics of solution-grown crystals, epitaxial crystals, and crystals etched in various fluids were correlated with crystal polarity. (Author).
