Related Books

Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications
Language: en
Pages: 480
Dissertation Abstracts International
Language: en
Pages: 794
Authors:
Categories: Dissertations, Academic
Type: BOOK - Published: 2005 - Publisher:

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Low Resistivity Contact Methodologies for Silicon, Silicon Germanium and Silicon Carbon Source/Drain Junctions of Nanoscale CMOS Integrated Circuits
Language: en
Pages:
Authors:
Categories:
Type: BOOK - Published: 2004 - Publisher:

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State-of-the-art p-channel metal oxide semiconductor field effect transistors (MOSFETs) employ Si(1-x)Ge(x) source/drain junctions to induce uniaxial compressiv
Metal Impurities in Silicon- and Germanium-Based Technologies
Language: en
Pages: 464
Authors: Cor Claeys
Categories: Technology & Engineering
Type: BOOK - Published: 2018-08-13 - Publisher: Springer

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This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals incl
Metal-oxide-semiconductor Devices Based on Epitaxial Germanium Layers Grown Selectively Directly on Silicon Substrates by Ultra-high-vacuum Chemical Vapor Deposition
Language: en
Pages: 252
Authors: Joseph Patrick Donnelly
Categories: Gate array circuits
Type: BOOK - Published: 2009 - Publisher:

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This document details experiments attempting to increase the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs) which are the mainstay